Text preview for : cek01n7.pdf part of CET cek01n7 . Electronic Components Datasheets Active components Transistors CET cek01n7.pdf



Back to : cek01n7.pdf | Home

CEK01N7
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

700V, 0.3A, RDS(ON) = 18 @VGS = 10V.

High dense cell design for extremely low RDS(ON).

Rugged and reliable.

Lead free product is acquired. D

TO-92(Bulk) & TO-92(Ammopack) package.




G


G
D G
S D
S
TO-92(Ammopack) TO-92(Bulk)
S



ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 700 V
Gate-Source Voltage VGS