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2SD669/2SD669A(NPN)
TO-126 Transistor
TO-126
1. EMITTER 2.500
7.400
7.800 1.100 2.900
1.500
2. COLLECTOR
3.900
3.000
3. BASE 4.100
3.200
3
2 10.60 0 0.000
11.00 0 0.300
1
Features
2.100
Low frequency power amplifier complementary pair 2.300
with 2SB649/A 1.170
1.370
MAXIMUM RATINGS (TA=25 unless otherwise noted) 15.30 0
15.70 0
Symbol Parameter Value Units
VCBO Collector- Base Voltage 180 V
0.660
VCEO Collector-Emitter Voltage 2SD669 120 0.860
V
2SD669A 160 0.450
0.600
2.290 TYP
VEBO Emitter-Base Voltage 5 V 4.480
4.680
IC Collector Current -Continuous 1.5 A
PC Collector Dissipation 1 W Dimensions in inches and (millimeters)
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 180 V
IC=10mA, IB=0 2DS669 120
Collector-emitter breakdown voltage V(BR)CEO V
2SD669A 160
Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V
Collector cut-off current ICBO VCB=160V, IE=0 10