msc81325.pdf part of ST msc81325 msc81325.pdf, . Electronic Components Datasheets Active components Transistors ST msc81325.pdf text manual preview

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MSC81325M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS

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. REFRACTORY/GOLD METALLIZATION
PRELIMINARY DATA

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EMITTER BALLASTED
RUGGEDIZED VSWR :1

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.
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY

. METAL/CERAMIC HERMETIC PACKAGE
POUT = 325 W MIN. WITH 6.7 dB GAIN .400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE BRANDING
MSC81325M 81325M

PIN CONNECTION

DESCRIPTION
The MSC81325M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding an infinite
load VSWR at any phase angle under full rated
conditions. Low RF thermal resistance and semi-
automatic bonding techniques ensure high relia-
bility and product consistency.
The MSC81325M is housed in the industry-stand- 1. Collector 3. Emitter
ard AMPACTM metal/ceramic hermetic package
2. Base 4. Base
with internal input/output matching structures.

ABSOLUTE MAXIMUM RATINGS (T case = 25