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SEMICONDUCTOR KTX711T
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
TV Control board Application
E
K B K
FEATURES
DIM MILLIMETERS
One PNP Transistor (Q1) 1 6 A _
2.9 + 0.2
B 1.6+0.2/-0.1
Two Switching Diode (D1, D2) C _
0.70 + 0.05
G
2 5 _
Low Saturation Voltage D 0.4 + 0.1
F
A
E 2.8+0.2/-0.3
: VCE(sat) = -0.25V(Max)@ IC = -100mA, IB = -10mA _
G
3 4 F 1.9 + 0.2
G 0.95
D
H _
0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
K 0.60
C
L
EQUIVALENT CIRCUIT (TOP VIEW) L 0.55
I H
J J
6 5 4 Marking
6 5 4 1. D1 Cathode / D2 Anode
2. Q1 Base
Lot No.
3. Q1 Emitter
D2 D1
4. Q1 Collector
Q1 5. D1 Anode
Type Name
T7 6. D2 Cathode
TS6
1 2 3
1 2 3
MAXIMUM RATING (Ta=25 )
TRANSISTOR
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -80 V
Collector-Emitter Voltage VCEO -80 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -500 mA
Base Current IB -100 mA
DIODE
CHARACTERISTIC SYMBOL RATING UNIT
Maximum (Peak) Reverse Voltage VRM 80 V
Reverse Voltage VR 80 V
Maximum (Peak) Forward Current IFM 300 mA
Average Forward Current IO 200 mA
Surge Current (100 ) IFSM 4 A
COMMON
CHARACTERISTIC SYMBOL RATING UNIT
Power Dissipation *PD 900 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150
* : Package mounted on a ceramic board (600mm2 0.8mm)
2011. 5. 23 Revision No : 2 1/4
KTX711T
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -80 - - V
hFE(1) VCE=-1V, IC=-10mA 100 - -
DC Current Gain
hFE(2) VCE=-1V, IC=-100mA 100 - 250
Collector-Emiotter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - - -0.25 V
Base-Emitter Voltage VBE VCE=-1V, IC=-100mA - - -1.2 V
Transition Frequency fT VCE=-2V, IC=-10mA 100 - - MHZ
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
VF(1) IF=1mA - 0.60 -
Forward Voltage VF(2) IF=10mA - 0.72 - V
VF(3) IF=100mA - 0.90 1.20
Reverse Current IR VR=80V - - 0.1 A
Total Capacitance CT VR=0V, f=1MHz - 0.9 3.0 pF
Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS
2011. 5. 23 Revision No : 2 2/4
KTX711T
Q1 (NPN TRANSISTOR)
I C - V CE h FE - I C
-500 500
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
-5mA Ta=25 C 300
DC CURRENT GAIN h FE
-400 Ta=100 C
-3mA Ta=25 C
-300
100
-2mA Ta=-25 C
-200 50
-1mA 30
-100 I B =0.5mA COMMON EMITTER
VCE =-2V
0mA
0 10
0 -2 -4 -6 -8 -10 -12 -14 -1 -3 -10 -30 -100 -300
COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C I C - V BE
COLLECTOR-EMITTER SATURATION
-0.5 -500
COLLECTOR CURRENT I C (mA)
COMMON EMITTER COMMON EMITTER
-0.3 V CE =-2V
I C /I B =10
VOLTAGE VCE(sat) (V)
-400
0 C
C
C
-0.1 -300
Ta=25
Ta=-25
Ta=10
C
100
Ta=
-0.05 -200
-0.03 Ta=25 C
Ta=-25 C
-100
-0.01 0
-1 -3 -10 -30 -100 -500 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)
D1, D2 (SWITCHING DIODE)
I F - VF I R - VR
3
10 10
REVERSE CURRENT I R (