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BSP19AT1G
NPN Silicon Expitaxial
Transistor
This family of NPN Silicon Epitaxial transistors is designed for use
as a general purpose amplifier and in switching applications. The
device is housed in the SOT-223 package which is designed for
medium power surface mount applications. http://onsemi.com
Features
SOT--223 PACKAGE
High Voltage: V(BR)CEO of 250 and 350 V
The SOT-223 Package Can Be Soldered Using Wave or Reflow NPN SILICON HIGH VOLTAGE
SOT-223 Package Ensures Level Mounting, Resulting in Improved TRANSISTOR SURFACE MOUNT
Thermal Conduction, and Allows Visual Inspection of Soldered Joints
The Formed Leads Absorb Thermal Stress During Soldering, COLLECTOR 2,4
Eliminating the Possibility of Damage to the Die
PNP Complement is BSP16T1 BASE
Moisture Sensitivity Level (MSL): 1 1
ESD: Human Body Model (HBM) = 4 KV
Machine Model (MM) = 400 V EMITTER 3
These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS
Compliant MARKING
4 DIAGRAM
MAXIMUM RATINGS (TC = 25C unless otherwise noted) 4
1 Collector
Rating Symbol Value Unit 2
3
Collector-Emitter Voltage (Open Base) VCEO 350 Vdc CASE 318E
AYW
Collector-Base Voltage (Open Emitter) VCBO 400 Vdc TO-261AA
SP19A G
STYLE 1 G
Emitter-Base Voltage (Open Collector) VEBO 5.0 Vdc
1 3
Collector Current (DC) IC 100 mAdc Base Emitter
2
THERMAL CHARACTERISTICS Collector
Characteristic Symbol Max Unit A = Assembly Location
Total Power Dissipation @ TA = 25C PD 0.8 W Y = Year
(Note 1) W = Work Week
Derate above 25C 6.4 mW/C SP19A = Specific Device Code
G = Pb--Free Package
Thermal Resistance, Junction--to--Ambient RJA 156 C/W (Note: Microdot may be in either location)
Junction and Storage Temperature Range Tstg --65 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum ORDERING INFORMATION
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the Device Package Shipping
Recommended Operating Conditions may affect device reliability. BSP19AT1G SOT--223 1000 / Tape & Reel
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum
(Pb--Free)
recommended footprint.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
September, 2010 - Rev. 8
- BSP19AT1/D
BSP19AT1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage V(BR)CEO Vdc
(IC = 1.0 mAdc, IB = 0) 350 --
Collector-Base Cutoff Current ICBO nAdc
(VCB = 400 Vdc, IE = 0) -- 20
Emitter-Base Cutoff Current IEBO mAdc
(VEB = 5.0 Vdc, IC = 0) -- 10
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE --
(IC = 20 mAdc, VCE = 10 Vdc) 40 --
Current-Gain -- Bandwidth Product fT MHz
(IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz) 70 --
Collector-Emitter Saturation Voltage VCE(sat) Vdc
(IC = 50 mAdc, IB = 4.0 mAdc) -- 0.5
Base-Emitter Saturation Voltage VBE(sat) Vdc
(IC = 50 mAdc, IB = 4.0 mAdc) -- 1.3
2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%
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2
BSP19AT1G
1000 1.2
IC/IB = 10
VCE(sat), COLLECTOR--EMITTER
VCE = 10 V
SATURATION VOLTAGE (V)
1
hFE, DC CURRENT GAIN
TJ = 125C
100 0.8
TJ = 25C
0.6 TJ = 125C
TJ = --55C
10 0.4 TJ = 25C
0.2
TJ = -- 55C
1 0
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain Figure 2. Collector Saturation Voltage
VBE(on), BASE--EMITTER ON VOLTAGE (V)
VBE(sat), BASE--EMITTER SATURATION
1.2 1.2
IC/IB = 10 VCE = 10 V
1 1
TJ = -- 55C TJ = -- 55C
0.8 0.8
VOLTAGE (V)
0.6 TJ = 25C 0.6 TJ = 25C
TJ = 125C
0.4 0.4 TJ = 125C
0.2 0.2
0 0
0.0001 0.001 0.01 1 0.0001 0.001 0.01 1
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. Base Saturation Voltage Figure 4. Base ON Voltage
10000 100
TJ = 25C TJ = 25C
f, CURRENT--GAIN -- BANDWIDTH
f = 5.0 MHz f = 1.0 MHz
VGS = 10 V VCE = 10 V
CIBO
C, CAPACITANCE (pF)
1000
PRODUCT (MHz)
100 10
COBO
10
1 1
0.1 1 10 100 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain - Bandwidth Product
- Figure 6. Capacitance
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3
BSP19AT1G
PACKAGE DIMENSIONS
SOT-
-223 (TO--261)
CASE 318E--04
ISSUE N
D
b1 NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4 MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
HE E A 1.50 1.63 1.75 0.060 0.064 0.068
1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004
b 0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90 3.06 3.20 0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
b D 6.30 6.50 6.70 0.249 0.256 0.263
E 3.30 3.50 3.70 0.130 0.138 0.145
e1 e 2.20 2.30 2.40 0.087 0.091 0.094
e e1 0.85 0.94 1.05 0.033 0.037 0.041
L 0.20 ------ ------ 0.008 ------ ------
C L1 1.50 1.75 2.00 0.060 0.069 0.078
HE 6.70 7.00 7.30 0.264 0.276 0.287
A 0 -- 10 0 -- 10
0.08 (0003) STYLE 1:
A1 L PIN 1. BASE
L1
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
2.3 2.3
0.248
0.091 0.091
2.0
0.079
1.5 SCALE 6:1 inches
mm
0.059
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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