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8550S(PNP)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
Excellent hFE linearity
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Dissipation 625 mW
TJ Junction Temperature 150
Tstg Junction and Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100uA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100uA, IC=0 -5 V
Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 uA
Collector cut-off current ICEO VCE= -20V,IB=0 -0.1 uA
Emitter cut-off current IEBO VEB= - 3V, IC=0 -0.1 uA
hFE(1) VCE= -1V, IC= -50mA 85 400
DC current gain
hFE(2) VCE= -1V, IC= -500mA 50
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.6 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V
VCE=- 6V, IC=-20mA
Transition frequency fT 150 MHz
f =30MHz
CLASSIFICATION OF hFE(1)
Rank B C D D3
Range 85-160 120-200 160-300 300-400
8550S(PNP)
TO-92 Bipolar Transistors
Typical Characteristics