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SEMICONDUCTOR KTC4370/A
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
A C
FEATURES
DIM MILLIMETERS
F
High Transition Frequency : fT=100MHz(Typ.). S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
Complementary to KTA1659/A. E
C _
2.70 + 0.3
B
D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
_
MAXIMUM RATING (Ta=25 ) L L J 13.6 + 0.5
K
R _
K 3.7 + 0.2
L 1.2+0.25/-0.1
CHARACTERISTIC SYMBOL RATING UNIT M
M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
Collector-Base KTC4370 160 _
P 6.8 + 0.1
VCBO V _
Voltage Q 4.5 + 0.2
KTC4370A 180 R _
2.6 + 0.2
N N H S 0.5 Typ
Collector-Emitter KTC4370 160
VCEO V
Voltage KTC4370A 180
Emitter-Base Voltage VEBO 5 V 1. BASE
Q
1 2 3
2. COLLECTOR
Collector Current IC 1.5 A 3. EMITTER
Base Current IB 0.15 A
Collector Power Dissipation (Tc=25 ) PC 20 W TO-220IS
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=160V, IE=0 - - 1.0 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 1.0 A
Collector-Emitter KTC4370 160 - -
V(BR)CEO IC=10mA, IB=0 V
Breakdown Voltage KTC4370A 180 - -
DC Current Gain hFE (Note) VCE=5V, IC=100mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 1.5 V
Base-Emitter Voltage VBE VCE=5V, IC=500mA - - 1.0 V
Transition Frequency fT VCE=10V, IC=100mA - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 25 - pF
Note : hFE Classification O:70~140, Y:120~240
2007. 5. 22 Revision No : 2 1/3
KTC4370/A
I C - VCE h FE - I C
2.0 500
COLLECTOR CURRENT I C (mA)
COMMON EMITTER COMMON EMITTER
300
Ta=25 C Ta=25 C
DC CURRENT GAIN h FE
1.6 250 80
140
30 100
1.2
VCE
12
VC
VCE
50
=10V
E =2
=5V
0.8 5 30
V
3
0.4 2
10
1
I B =0mA
0 5
0 4 8 12 16 20 3 10 30 100 300 1K 2K
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
500 1.0
COMMON EMITTER
300 Ta=100 C Ta=25 C
DC CURRENT GAIN h FE
0.5
VOLTAGE VCE(sat) (V)
Ta=25 C
Ta=0 C 0.3
100
50
0
VCE =10V =1
30 /I B 5
VCE =5V 0.1 IC =
/I B
IC
COMMON EMITTER
10 0.05
Tc=25 C
5 0.03
3 10 30 100 300 1K 2K 5 10 30 100 300 1K 3K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C I C - VBE
COLLECTOR-EMITTER SATURATION
5.0 1.6K
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
3.0 1.4K VCE =5V
IC /IB =10
VOLTAGE VCE(sat) (V)
1.2K
1.0 1K
C
C
C
100
25
0.5 800
Ta=0
Ta=
Ta=
0.3 600
C
0 0
=1 25 400
Ta
0
0.1 200
0.05 0
5 10 30 100 300 1K 3K 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V)
2007. 5. 22 Revision No : 2 2/3
KTC4370/A
C ob - VCB SAFE OPERATING AREA
COLLECTOR OUTPUT CAPACITANCE
100 5
I E =0 I C MAX(PULSED) * * SINGLE
f=1MHz 3 NONREPETITIVE
50 PULSE Tc=25 C
Tc=25 C
50 100
COLLECTOR CURRENT I C (A)
30 0m m
10
DC
s s
1m
ms
1 I C MAX OP
* * *
s
ER
C ob (pF)
(CONTINUOUS) AT *
IO
10 0.5 TH N
LI ER
MI MA
0.3 TE L
5 D
S/B
3
LI
M
0.1
IT
CURVES MUST BE
DE
DERATED LINEARLY WITH
0.05
VCEO MAX.
1 INCREASE IN TEMPERATURE
0.5 1 3 5 10 30 50 100 200 0.03 VCEO MAX=160V
KTC4370
COLLECTOR-BASE VOLTAGE VCB (V) VCEO MAX=180V
KTC4370A
0.01
3 5 10 30 50 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
fT - IC Pc - Ta
COLLECTOR POWER DISSIPATION PC (W)
TRANSITION FREQUENCY f T (MHz)
500 25
COMMON EMITTER 1 Tc=Ta
300 INFINITE HEAT SINK
Tc=25 C 1
20 2 NO HEAT SINK
=5V
VCE
15
100 =2V
VCE
50 10
30
5
2
10 0
2 5 10 30 50 100 300 500 0 20 40 60 80 100 120 140 160
COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C)
2007. 5. 22 Revision No : 2 3/3