bux86p_87p_1.pdf part of Philips bux86p 87p 1 bux86p_87p_1.pdf, . Electronic Components Datasheets Active components Transistors Philips bux86p_87p

Text preview for : bux86p_87p_1.pdf part of Philips bux86p 87p 1 . Electronic Components Datasheets Active components Transistors Philips bux86p_87p_1.pdf

Back to : bux86p_87p_1.pdf | Home

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUX86P
BUX87P

GENERAL DESCRIPTION
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
BUX 86P 87P
VCESM Collector-emitter voltage peak value VBE = 0 V - 800 1000 V
VCEO Collector-emitter voltage (open base) - 400 450 V
VCESAT Collector-emitter saturation voltage IC = 0.2 A; IB = 20 mA - 1 V
IC Collector current (DC) - 0.5 A
ICM Collector current peak value - 1 A
Ptot Total power dissipation Tmb 25