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CEP830G/CEB830G
CEF830G
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
Type VDSS RDS(ON) ID @VGS
CEP830G 500V 1.5 5A 10V
CEB830G 500V 1.5 5A 10V
CEF830G 500V 1.5 5A e 10V
D
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
G
D
G G
G D D
S S S
S
CEB SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-220 TO-220F
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Limit
Parameter Symbol Units
TO-220/263 TO-220F
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS