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STS2DNE60
DUAL N-CHANNEL 60V - 0.180 - 2A SO-8
STripFETTM POWER MOSFET

TYPE VDSS RDS(on) ID

STS2DNE60 60 V < 0.23 2A
s TYPICAL RDS(on) = 0.180
s LOW THRESHOLD GATE DRIVE
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY

SO-8
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature SizeTM"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less INTERNAL SCHEMATIC DIAGRAM
critical alignment steps therefore a remarkable
manufacturing reproducibility.

APPLICATIONS
s DC MOTOR DRIVE

s DC-DC CONVERTERS

s BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT
s POWER MANAGEMENT IN PORTABLE/

DESKTOP PCS

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k) 60 V
VGS Gate- source Voltage