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PXT8550
SOT-89 Transistor(NPN)
1. BASE
1 2. COLLECTOR SOT-89
4.6
B
2 1.6
4.4
3. EMITTER 1.4
1.8
1.4
3
Features 2.6 4.25
2.4 3.75
Compliment to PXT8050 0.8
MIN
0.53
0.48 0.40
MARKING: Y2 0.44
0.37
0.13 B 0.35
2x)
1.5
3.0
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1.5 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= -100A, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE= -100A, IC=0 -5 V
Collector cut-off current ICBO VCB= -40 V,IE=0 -0.1 A
Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 A
Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 A
hFE(1) VCE= -1V, IC= -100mA 85 400
DC current gain
hFE(2) VCE= -1V, IC= -800mA 40
Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB= -80mA -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-800mA, IB= -80mA -1.2 V
Base-emitter on voltage VBE(on) Ic=-1V,VCE=-10mA -1 V
Base-emitter positive favor voltage VBEF IB=-1A -1.55 V
Transition frequency fT VCE= -10V, IC= -50mA 100 MHz
output capacitance Cob VCB=-10V,IE=0,f=1MHz 20 pF
CLASSIFICATION OF hFE(1)
Rank B C D D3
Range 85-160 120-200 160-300 300-400
PXT8550
SOT-89 Transistor(NPN)
Typical characteristics