2sc1623_sot-23.pdf part of LGE 2sc1623 sot-23 2sc1623_sot-23.pdf, . Electronic Components Datasheets Active components Transistors LGE 2sc1623

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2SC1623
SOT-23 Transistor(NPN)

1. BASE
SOT-23
2. EMITTER
3. COLLECTOR

Features
High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA
High voltage:VCEO=50V

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
Dimensions in inches and (millimeters)
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 100 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V

Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V

Collector cut-off current ICBO VCB=60V,IE=0 0.1 A

Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A

DC current gain hFE VCE=6V,IC=1mA 90 200 600

Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.3 V

Base-emitter saturation voltage VBE(sat) IC=100mA,IB=10mA 1 V

Transition frequency fT VCE=6V,IC=10mA 250 MHz

CLASSIFICATION OF hFE
Rank L4 L5 L6 L7

Range 90-180 135-270 200-400 300-600

Marking L4 L5 L6 L7
2SC1623
SOT-23 Transistor(NPN)

Typical Characteristics
2SC1623
SOT-23 Transistor(NPN)