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2SA940(PNP)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
3
2
1
Features
Wide safe Operating Area.
Complementary to 2SC2703
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Paramenter Value Units
VCBO Collector-Base Voltage -150 V
VCEO Collector-Emitter Voltage -150 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -1.5 A
PC Collector Power Dissipation 1.5 W
Tj Junction Temperature 150
Tstg Storage Temperature Range -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =-100A, IE=0 -150 V
Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A, IC=0 -5 V
Collector cut-off current ICBO VCB=-120V, IE=0 -10 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -10 A
DC current gain hFE VCE=-10V, IC=-0.5A 40 140
Collector-emitter saturation voltage VCE(sat) IC=-0.5A, IB=-50mA -1.5 V
Base-emitter voltage VBE VCE=-10V, IC=-0.5A -0.65 -0.85 V
Transition frequency fT VCE=-10V, IC=-0.5A 4 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 55 pF
2SA940(PNP)
TO-220 Transistor
Typical Characteristics