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BDW51C
BDW52C

SILICON NPN SWITCHING TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s HIGH DC CURRENT GAIN

APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
1
2
DESCRIPTION
The BDW51C is a silicon epitaxial-base NPN
transistor in Jedec TO-3 metal case. It is intended TO-3
for use in power linear and switching applications.
The complementary PNP is the BDW52C.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BDW51C
PNP BDW52C
V CBO Collector-Base Voltage (I E = 0) 100 V
V CES Collector-Emitter Voltage (V BE = 0) 100 V
V CEO Collector-Emitter Voltage (I B = 0) 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 15 A
I CM Collector Peak Current (repetitive) 20 A
IB Base Current 7 A
P tot Total Dissipation at T c = 25 o C 125 W
o
T stg Storage Temperature -65 to 200 C
o
Tj Max. Operating Junction Temperature 200 C
For PNP types voltage and current values are negative.

July 1997 1/4
BDW51C / BDW52C

THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.4 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off V CB = 100 V 500