Text preview for : buld742c.pdf part of ST buld742c . Electronic Components Datasheets Active components Transistors ST buld742c.pdf



Back to : buld742c.pdf | Home

BULD742C
High voltage fast-switching
NPN power transistor

Features
Low spread of dynamic parameters
High voltage capability
Minimum lot-to-lot spread for reliable operation
Very high switching speed 3
1
Applications
Electronic ballast for fluorescent lighting DPAK

Switch mode power supplies

Description
The device is manufactured using high voltage Figure 1. Internal schematic diagram
Multi-Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.




Table 1. Device summary
Order code Marking Package Packaging

BULD742CT4 BULD742C DPAK Tape & reel




August 2007 Rev 1 1/12
www.st.com 12
Contents BULD742C


Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11




2/12
BULD742C Electrical ratings


1 Electrical ratings

Table 2. Absolute maximum rating
Symbol Parameter Value Unit

VCES Collector-emitter voltage (VBE = 0) 1050 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0, IB = 2 A, tp < 10 ms) V(BR)EBO V
IC Collector current 4 A
ICM Collector peak current (tP < 5ms) 8 A
IB Base current 2 A
IBM Base peak current (tP < 5ms) 4 A
Ptot Total dissipation at Tc = 25