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TIP29A/29B/29C
TIP30A/30B/30C
COMPLEMENTARY SILICON POWER
TRANSISTORS
s TIP31A, TIP31C, TIP32A AND TIP32C ARE
SGS-THOMSON PREFERRED
SALESTYPES

DESCRIPTION
The TIP31A, TIP31B and TIP31C are silicon
epitaxial-base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
medium power linear and switching applications. 3
The complementary PNP types are TIP32A, 2
1
TIP32B and TIP32C.
TO-220




INTERNAL SCHEMATIC DIAGRAM




ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP29A TIP29B TIP29C
PNP TIP30A TIP30B TIP30C
V CBO Collector-Base Voltage (I E = 0) 60 80 100 V
V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 1 A
I CM Collector Peak Current 3 A
IB Base Current 0.4 A
P tot Total Dissipation at T case 25 C o
30 W
T amb 25 o C 2 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
For PNP types voltage and current values are negative.

December 1995 1/4
TIP29A/TIP29B/TIP29C/TIP30A/TIP30B/TIP30C

THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 4.17 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CBO Collector Cut-off for TIP29A/30A
Current (I B = 0) V CE = 30 V 0.3 mA
for TIP29B/29C/30B/30C
V CB = 60 V 0.3 mA
I CES Collector Cut-off for TIP29A/30A V CE = 60 V 0.2 mA
Current (V BE = 0) for TIP29B/30B V CE = 80 V 0.2 mA
for TIP29C/30C V CE = 100 V 0.2 mA
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
VCEO(sus) * Collector-Emitter I C = 30 mA
Sustaining Voltage for TIP29A/30A 60 V
(I B = 0) for TIP29B/30B 80 V
for TIP29C/30C 100 V
V CE(sat) * Collector-Emitter IC = 1 A I B = 125 mA 0.7 V
Saturation Voltage
V BE(on) * Base-Emitter Voltage IC = 1 A V CE = 4 V 1.3 V
h FE * DC Current Gain I C = 0.2 A V CE = 4 V 40
IC = 1 A V CE = 4 V 15 75
hfe Small Signal Current I C = 0.2 A V CE = 10 V f = 1 KHz 20
Gain I C = 0.2 A V CE = 10 V f = 1 MHz 3
Pulsed: Pulse duration = 300