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MMDT3904
SOT-363 Dual Transistor(NPN)

SOT-363

Features
Epitaxial planar die construction
Ideal for low power amplification and switching

MARKING:K6N
MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V Dimensions in inches and (millimeters)
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 0.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 5 V
Collector cut-off current ICBO VCB=30V,IE=0 0.05 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.05 A
hFE(1) VCE=1V,IC=0.1mA 40
hFE(2) VCE=1V,IC=1mA 70
DC current gain hFE(3) VCE=1V,IC=10mA 100 300
hFE(4) VCE=1V,IC=50mA 60
hFE(5) VCE=1V,IC=100mA 30
VCE(sat)1 IC=10mA,IB=1mA 0.2 V
Collector-emitter saturation voltage
VCE(sat)2 IC=50mA,IB=5mA 0.3 V
VBE(sat)1 IC=10mA,IB=1mA 0.65 0.85 V
Base-emitter saturation voltage
VBE(sat)2 IC=50mA,IB=5mA 0.95 V
Transition frequency fT VCE=20V,IC=10mA,f=100MHz 300 MHz
Collector output capacitance Cob VCB=5V,IE=0,f=1MHz 4 pF
Noise figure NF VCE=5V,Ic=0.1mA,f=1kHz,RS=1K 5 dB
Delay time td VCC=3V, VBE(off)=-0.5V 35 nS
Rise time tr IC=10mA , IB1=-IB2= 1mA 35 nS
Storage time tS VCC=3V, IC=10mA 200 nS
Fall time tf IB1=-IB2=1mA 50 nS
MMDT3904
SOT-363 Dual Transistor(NPN)

Typical characteristics