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BULD128D-1
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s ORDER CODES : BULD128DA-1 AND
BULD128DB-1
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR 3
RELIABLE OPERATION 2
s VERY HIGH SWITCHING SPEED 1
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS: IPAK
s ELECTRONIC BALLASTS FOR (TO-251)
FLUORESCENT LIGHTING
s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION INTERNAL SCHEMATIC DIAGRAM
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CES Collector-Emitter Voltage (V BE = 0) 700 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage (I C = 0) 9 V
IC Collector Current 4 A
I CM Collector Peak Current (tp < 5 ms) 8 A
IB Base Current 2 A
I BM Base Peak Current (t p < 5 ms) 4 A
P t ot Total Dissipation at T c = 25 o C 35 W
o
T stg St orage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
February 1998 1/7
BULD128D-1
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-Case Max 3.57 C/W
o
R t hj- amb Thermal Resistance Junction-Ambient Max 62.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 700 V 100