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2STW4466

High power NPN epitaxial planar bipolar transistor

Features
High breakdown voltage VCEO = 80 V
Complementary to 2STW1693
Typical ft = 20 MHz

Fully characterized at 125 oC

Applications 3
2
Audio power amplifier 1
TO-247
Description
The device is a NPN transistor manufactured in
low voltage planar technology using base island Figure 1. Internal schematic diagram
layout. The resulting transistor shows good gain
linearity coupled with low VCE(sat) behaviour.
Recommended for 40 W to 70 W high fidelity
audio frequency amplifier output stage.

Table 1. Device summary
Order code Marking Package Packaging

2STW4466 2STW4466 TO-247 Tube

September 2008 Rev 2 1/9
www.st.com 9
Electrical ratings 2STW4466

1 Electrical ratings

Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 100 V
VCEO Collector-emitter voltage (IB = 0) 80 V
VEBO Emitter-base voltage (IC = 0) 6 V
IC Collector current 6 A
ICM Collector peak current (tP < 5 ms) 12 A
PTOT Total dissipation at Tc = 25