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CZD1952
PNP High Speed
Elektronische Bauelemente
Switching Transistor
RoHS Compliant Product
TO-252
Description
The CZD1952 is designed for high speed switching applications.
Features
* Wide SOA
* Low Saturation Voltage,Typically VCE(sat)=-0.2V at IC/IB=-3A/-0.15A
* High Speed Switching,Typically tf=-0.15us at IC=-3A
* Complements to CZD5103
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 6.40 6.80 G 0.50 0.70
B 5.20 5.50 H 2.20 2.40
C 6.80 7.20 J 0.45 0.55
D 2.20 2.80 K 0 0.15
E 2.30 REF. L 0.90 1.50
F 0.70 0.90 M 5.40 5.80
S 0.60 0.90 R 0.80 1.20
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Absolute Maximum Ratings at TA=25 C (unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO -100 V
Collector to Emitter Voltage VCEO -60 V
Emitter to Base Voltage VE BO -5
. V
Collect Current (DC) IC -5 A
Collect Current (Pulse) IC - 10 A
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PD (TA =25 C ) 1 W
Total Power Dissipation o
PD (TC =25 C ) 10 W
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Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C
ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)
O
Parameter Symbol Min. Typ. Max. Unit Test Cond itions
Collector-Base Breakdown Voltage BVCBO -100 - - V IC=-50 uA, IE=0
Collector-Emitter Breakdown Voltage BV CEO -60 - - V IC= - 1mA, IB=0
Emitter-Base Breakdown Voltage BVEBO -5 - - V IE= - 50uA, IC=0
Cut-off Current ICES - - - 10 uA VCE=-100V, V EB=0
Emitter Cut-off Current IEBO - - -10 uA VEB=-5V, IC=0
*VCE(sat)1 - - -0.3 V IC= -3A, IB= -0.15A
Collector-Emitter Saturation Voltage
*VCE(sat)2 - - -0.5 V IC= -4A, IB= -0.2A
*VBE(on)1 - - -1.2 V IC= -3A, IB= -0.15A
Base-Emitter Voltage, On
*VBE(on)2 - - -1.5 V IC= -4A, IB= -0.2A
DC Current Gain *hFE1 120 - 320 VCE=-2V, IC=-1A
DC Current Gain *hFE2 40 - - VCE=-2V, IC= -3A
Output Capacitance Cob - 130 - pF VCB=-10V,IE=0,f=1MHz
Transition Frequency fT - 80 - MHz VCE=- 10V, IE=0.5A,f=30MHz
Turn-On Time ton - - 0.3 IC=-3A,RL=10