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TN2106

N-Channel Enhancement-Mode
Vertical DMOS FET
Features General Description
Free from secondary breakdown This low threshold, enhancement-mode (normally-off)
Low power drive requirement transistor utilizes a vertical DMOS structure and Supertex's
Ease of paralleling well-proven, silicon-gate manufacturing process. This
Low CISS and fast switching speeds combination produces a device with the power handling
Excellent thermal stability capabilities of bipolar transistors and the high input
Integral source-drain diode impedance and positive temperature coefficient inherent
High input impedance and high gain in MOS devices. Characteristic of all MOS structures, this
Complementary N- and P-channel devices device is free from thermal runaway and thermally-induced
secondary breakdown.
Applications Supertex's vertical DMOS FETs are ideally suited to a
Logic level interfaces - ideal for TTL and CMOS wide range of switching and amplifying applications where
Solid state relays very low threshold voltage, high breakdown voltage, high
Battery operated systems input impedance, low input capacitance, and fast switching
Photo-voltaic drives speeds are desired.
Analog switches
General purpose line drivers
Telecom switches

Ordering Information
Package Option RDS(ON) VGS(th)
BVDSS/BVDGS
Device (max) (max)
TO-236AB (SOT-23) TO-92 (V)
() (V)
TN2106 TN2106K1-G TN2106N3-G 60 2.5 2.0
-G indicates package is RoHS compliant (`Green')

Pin Configurations
DRAIN

SOURCE

SOURCE DRAIN
GATE

Absolute Maximum Ratings GATE

Parameter Value TO-236AB (SOT-23) (K1) TO-92 (N3)
Drain-to-source BVDSS
Drain-to-gate BVDGS Product Marking
Gate-to-source