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Si2302DS
Vishay Siliconix
N-Channel 1.25-W, 2.5-V MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.085 @ VGS = 4.5 V 2.8
20
0.115 @ VGS = 2.5 V 2.4
TO-236
(SOT-23)
G 1
3 D
S 2
Top View
Si2302DS (A2)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20
V
Gate-Source Voltage VGS "8
TA= 25_C 2.8
Continuous Drain Current (TJ = 150_C)b ID
TA= 70_C 2.2
A
Pulsed Drain Currenta IDM 10
Continuous Source Current (Diode Conduction)b IS 1.6
TA= 25_C 1.25
Power Dissipationb PD W
TA= 70_C 0.80
Operating Junction and Storage Temperature Range TJ, Tstg