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SEMICONDUCTOR TIP42CF
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
A C
FEATURES
DIM MILLIMETERS
F
Complementary to TIP41CF. S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
E
C _
2.70 + 0.3
B
D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
MAXIMUM RATING (Ta=25 ) H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
CHARACTERISTIC SYMBOL RATING UNIT
K
R _
K 3.7 + 0.2
L 1.2+0.25/-0.1
Collector-Base Voltage VCBO -100 V M
M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
Collector-Emitter Voltage VCEO -100 V P _
6.8 + 0.1
Q _
4.5 + 0.2
Emitter-Base Voltage VEBO -5 V R _
2.6 + 0.2
N N H S 0.5 Typ
DC IC -6
Collector Current A
Pulse ICP -10
1. BASE
Q
Base Current IB -2 A 1 2 3
2. COLLECTOR
Collector Power Ta=25 2 W 3. EMITTER
PC
Dissipation Tc=25 25 W
Junction Temperature Tj 150
TO-220IS
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Emitter Sustaining Voltage VCEO(SUS) IC=-30mA, IB=0 -100 - - V
Collector Cut-off Current ICEO VCE=-60V, IB=0 - - -0.7 mA
Collector Cut-off Current ICES VCE=-100V, VEB=0 - - -400 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1 mA
VCE=-4V, IC=-0.3A 30 - -
DC Current Gain hFE
VCE=-4V, IC=-3A 15 - 75
Collector-Emitter Saturation Voltage VCE(sat) IC=-6A, IB=-600mA - - -1.5 V
Base-Emitter On Voltage VBE(on) VCE=-4V, IC=-6A - - -2.0 V
Transition Frequency fT VCE=-10V, IC=-500mA 3.0 - - MHz
2007. 5. 21 Revision No : 0 1/2
TIP42CF
h FE - I C VCE(sat) ,V BE(sat) - I C
1k -2.0
VCE =-4V I C /I B =10
300
SATURATION VOLTAGE
DC CURRENT GAIN h FE
-1.6
VCE(sat) , VBE(sat) (V)
100
-1.2
30
VBE(sat)
-0.8
VCE(sat)
10
-0.4
3
1 0
-0.01 -0.1 -1 -10 -0.01 -0.1 -1 -10 -100
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT IC (A)
P C - Ta SAFE OPERATING AREA
COLLECTOR POWER DISSIPATION PC (W)
30 -30
COLLECTOR CURRENT I C (A)
25 I C MAX.(PULSE) *
-10
I C MAX.
0.5 S
1m
20 (CONTIN
mS
5m
-3 -UOUS) DC
S
* * *
OP
15 ER
AT
-1 IN
G
10
* SINGLE NONREPETITIVE
PULSE Tc=25 C
-0.3 CURVES MUST BE DERATED
5
LINEARLY WITH INCREASE
IN TEMPERATURE
0 -0.1
0 50 100 150 200 -1 -3 -10 -30 -100 -300
AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE V CE (V)
2007. 5. 21 Revision No : 0 2/2