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MMBTA55 / MMBTA56
Elektronische Bauelemente PNP Silicon
Driver Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-23
3 SOT-23
Dim Min Max
1 A A 2.800 3.040
2 L
B 1.200 1.400
3 C 0.890 1.110
C OLLE C TOR Top View B S D 0.370 0.500
3 1 2
G 1.780 2.040
V G H 0.013 0.100
1 J 0.085 0.177
B AS E
C K 0.450 0.600
2 L 0.890 1.020
D H J
E MIT T E R K S 2.100 2.500
V 0.450 0.600
All Dimension in mm
MAXIMUM RATINGS
RATING SYMBOL VALUE UNIT
MMBTA55 -60
Collector - Emitter Voltage VCEO V
MMBTA56 -80
MMBTA55 -60
Collector - Base Voltage VCBO V
MMBTA56 -80
Emitter - Base Voltage VEBO -4.0 V
Collector Current - Continuous IC -500 mA
Marking Code: MMBTA55:2H , MMBTA56:2GM
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Total Device Dissipation FR-5 Board(1) TA = 25 225 mW
PD
Derate Above 25 1.8 mW /
Thermal Resistance, Junction to Ambient R JA 556 /W
Total Device Dissipation Alumina Substrate(2), TA = 25 300 mW
PD
Derate Above 25 2.4 mW /
Thermal Resistance, Junction to Ambient R JA 417 /W
Operating and Storage Junction Temperature Range TJ, TSTG -55 ~ +150
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 1 of 4
MMBTA55 / MMBTA56
Elektronische Bauelemente PNP Silicon
Driver Transistor
ELECTRICAL CHARACTERISTICS (TA = 25 unless otherwise noted)
CHARACTERISTIC SYMBOL Min. Max. UNIT
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage(3) MMBTA55 -60 -
V(BR)CEO V
(IC = -1.0 mA, IB = 0) MMBTA56 -80 -
Emitter - Base Breakdown Voltage
V(BR)EBO -4.0 - V
(IE = -100