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TDA8171
VERTICAL DEFLECTION BOOSTER

. . . . . .

POWER AMPLIFIER FLYBACK GENERATOR THERMAL PROTECTION OUTPUT CURRENT UP TO 3.0APP FLYBACK VOLTAGE UP TO 70V (on Pin 5) INTERNAL REFERENCE VOLTAGE

DESCRIPTION Designed for monitors and high performance TVs, the TDA8171 vertical deflection booster delivers flyback voltages up to 70V. The TDA8171 operates with supplies up to 35V and provides up to 3APP output current to drive the yoke. The TDA8171 is offered in HEPTAWATT package. PIN CONNECTIONS
7 6 5 4 3 2 1 Tab connected to Pin 4 NON-INVERTING INPUT + REFERENCE VOLTAGE OUTPUT STAGE SUPPLY OUTPUT GROUND FLYBACK GENERATOR SUPPLY VOLTAGE INVERTING INPUT

HEPTAWATT (Plastic Package) ORDER CODE : TDA8171

BLOCK DIAGRAM
SUPPLY VOLTAGE 2 OUTPUT STAGE SUPPLY 6 FLYBACK GENERATOR 3 FLYBACK GENERATOR

REFERENCE VOLTAGE INVERTING INPUT 1 10k NON-INVERTING + REFERENCE VOLTAGE 7

POWER AMPLIFIER THERMAL PROTECTION

5

OUTPUT

TDA8171

4 GROUND

December 1998

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8171-02.EPS

8171-01.EPS

TDA8171
ABSOLUTE MAXIMUM RATINGS
Symbol VS V6 V1 , V7 IO I3 I3 VESD Toper Tstg Tj
Notes : 1. 2. 3. 4.

Parameter Supply Voltage (Pin 2) (see Note 1) Flyback Peak Voltage (Pin 6) (see Note 1) Amplifier Input Voltage (Pins 1-7) (see Note 1) Maximum Output Peak Current (see Notes 2 and 3) Maximum Sink Current (first part of flyback) (t < 1ms) Maximum Source Current (t < 1ms) Electrostatic Handling for all pins (see Note 4) Operating Ambient Temperature Storage Temperature Junction Temperature
Versus Pin 4. The output current can reach 4A peak for t 10µs (up to 120Hz). Provided SOAR is respected (see Figures 1 and 2). Equivalent to discharging a 100pF capacitor through a 1.5k series resistor.

Value 40 75 - 0.3, + VS 2.5 2.5 2.5 2000 - 20, + 75 - 40, + 150 +150

Unit V V V A A A V
o o o

C C C
8171-01.TBL 8171-03.TBL 8171-02.TBL

THERMAL DATA
Symbol Rth (j-c) Tt Tjr Parameter Junction-case Thermal Resistance Temperature for Thermal Shutdown Recommended Max. Junction Temperature Max. Value 3 150 120 Unit
o

C/W
o o

C C

ELECTRICAL CHARACTERISTICS (VS = 35V, TA = 25oC, unless otherwise specified)
Symbol VS I2 I6 IO I1 V7 V7/VS V7/t GV V5L V5H VD5 - 6 VD3 - 2 V3SL V3SH Parameter Operating Supply Voltage Range Pin 2 Quiescent Current Pin 6 Quiescent Current Max. Peak Output Current Amplifier Bias Current Reference Voltage Reference Voltage Drift versus Supply Voltage Reference Voltage Drift versus Temperature Voltage Gain Output Saturation Voltage to GND (Pin 4) Output Saturation Voltage to Supply (Pin 6) Diode Forward Voltage between Pins 5-6 Diode Forward Voltage between Pins 3-2 Saturation Voltage on Pin 3 Saturation Voltage to Pin 2 (2nd part of flyback) I5 = 1.5A I5 = - 1.5A I5 = 1.5A I3 = 1.5A I3 = 20mA I3 = - 1.5A 80 1 1.8 1.8 1.6 0.4 2.1 1.7 2.3 2.3 2.2 1 2.8 V1 = 1V 2.35 1 0.15 2 I3 = 0, I5 = 0 I3 = 0, I5 = 0, V6 = 35V 8 Test Conditions Min. 10 9 15 Typ. Max. 35 20 30 1.5 -1 Unit V mA mA A µA V mV/V mV/oC dB V V V V V V

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TDA8171
APPLICATION CIRCUIT
+ VS CF

2

6

3
FLYBACK GENERATOR

R5

REFERENCE VOLTAGE

1
10k POWER AMPLIFIER THERMAL PROTECTION

5
0.47µF 1.5 YOKE 330

7

TDA8171
4
R3

R4

CL R2

Figure 1 : Output Transistors SOA (for secondary breakdown)
IC (A) 10 @ Tcase = 25°C

Figure 2 : Secondary Breakdown Temperature Derating Curve (ISB = secondary breakdown current)
ISB (%) 100

90
1

80
10-1 t = 1ms t = 10ms t = 100ms 1 10

70
8171-04.EPS

VCE (V) 102

10-2

60 25 50 75

Tcase (°C) 100 125

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8171-05.EPS

8171-03.EPS

R1

TDA8171
PACKAGE MECHANICAL DATA : HEPTAWAT

Dimensions A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia.

Min.

Millimeters Typ.

2.4 1.2 0.35 0.6 2.41 4.91 7.49 10.05 16.97 14.92 21.54 22.62 2.6 15.1 6 2.8 5.08 3.65 2.54 5.08 7.62

Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4

Min.

Inches Typ.

0.094 0.047 0.014 0.024 0.095 0.193 0.295 0.396 0.668 0.587 0.848 0.891 0.100 0.200 0.300

Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409

3 15.8 6.6

0.102 0.594 0.236 0.110 0.200

0.118 0.622 0.260
HEPTV.TBL

3.85

0.144

0.152

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics - All Rights Reserved Purchase of I2C Components of STMicroelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com

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PM-HEPTV.EPS