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STP165N10F4
N-channel 100 V, 4.4 m 120 A TO-220
,
STripFETTM DeepGATETM Power MOSFET
Features
Order code VDSS RDS(on) max ID
STP165N10F4 100 V < 5.5 m 120 A
N-channel enhancement mode
100% avalanche rated 2
3
1
Low gate charge
TO-220
Very low on-resistance
Application
Switching applications
Description Figure 1. Internal schematic diagram
The STP165N10F4 is an N-channel
enhancement mode Power MOSFET built with
STripFETTM DeepGATETM technology with a new
gate structure. The product is tailored to minimize
on-resistance.
Table 1. Device summary
Order code Marking Package Packaging
STP165N10F4 165N10F4 TO-220 Tube
November 2010 Doc ID 15781 Rev 2 1/12
www.st.com 12
Contents STP165N10F4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 15781 Rev 2
STP165N10F4 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 100 V
VGS Gate- source voltage