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CMBT2222A
NPN Silicon Planar Epitaxial Transistors
Pin configuration:
1. BASE
2. EMITTER
3. COLLECTOR
3
1
2
Unit: inch (mm)
Absolute Maximum Ratings
Symbol Value UNIT
Collector-base voltage (open emitter)
VCBO max 75 V
Collector-emmitter voltage (open base)
VCEO max 40 V
Emmitter base voltage (open collector)
VEBO max 6.0 V
Collector current (d.c.) IC max 600 mA
Total power dissipation up to
Ptot max 250 mW
Tamb = 25oC
D.C. current gain
IC = 150mA; VCE = 10V 100 to 300
hFE
IC = 500mA; VCE = 10V > 40
Transition frequency at f = 100MHZ
fT > 300 MHZ
IC = 20mA; VCE = 20V
Ratings (at TA = 25oC unless otherwise specified)
Limmiting values
Symbol Value UNIT
Collector-base voltage (open emitter)
VCBO max 75 V
Collector-emitter voltage (open base)
VCEO max 40 V
Emitter-base voltage (open collector)
VEBO max 6.0 V
Collector current (d.c.) IC max 600 mA
Total power dissipation up to
Ptot max 250 mW
Tamb = 25oC
o
Storge Temperature Tstg -55 to +150 C
o
Junction Temperature Tj max 150 C
Thermal Resistance
Rth j-a 500 K/W
from junction to Ambient
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CMBT2222A
NPN Silicon Planar Epitaxial Transistors
Characteristics (at Tj=25 oC unless otherwise specified)
Symbol Value UNIT
Collector cut-off current
IE = 0; VCB = 60V ICBO < 0.01
o uA
IE = 0; VCB = 60V; Tj = 125 C ICBO < 10
VEB = 3 V; VCE = 60V ICEX < 10 nA
Base current
with reverse biased emitter junction IBEX < 20 nA
VFB = 3V; VCE = 60V
Emitter-base cut-off current
IEBO < 10 nA
IC = 0; VEB = 3 V
Saturation voltage
IC = 150mA; IB = 15 mA VCEsat < 300 mV
VBEsat 0.6 to 1.2 V
IC = 500mA; IB = 50 mA VCEsat < 1.0 V
VBEsat < 2.0 V
Breakdown voltages
IC = 1.0mA; IB = 0 V(BR)CEO > 40
IC = 100uA; IE = 0 V(BR)CBO > 75 V
IC = 0; IE = 10uA V(BR)EBO > 6.0
D.C. current gain
IC = 0.1mA; VCE = 10V > 35
IC = 1mA; VCE = 10V > 50
IC = 10mA; VCE = 10V > 75
hFE
IC = 10mA; VCE = 10V; Tamb= -55oC > 35
IC = 150mA; VCE = 10V 100 to 300
IC = 150mA; VCE = 1V > 50
IC = 500mA; VCE = 10V > 40
Transition frequency at f = 100 MHZ
fT > 300 MHZ
IC = 20mA; VCE = 20V
Output capacitance at f = 1 MHZ
CO < 8.0 pF
IE = 0; VCB = 10V
Input capacitance at f = 1 MHZ
Ci < 25 pF
IE = 0; VEB = 0.5V
Noise figure at RS = 1K ohm
F < 4.0 dB
IC = 100uA; VCE = 10V; f= 1kHZ
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CMBT2222A
NPN Silicon Planar Epitaxial Transistors
Switching times
(between 10% and 90% levels)
Turn-on time switched to IC= 150mA
delay time td < 10 ns
rise time tr < 25
Turn-off time switched from IC= 150mA
storage time ts < 225
fall time tf < 60
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