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2SC5200
High power NPN epitaxial planar bipolar transistor
Preliminary data
Features
High breakdown voltage VCEO = 230 V
Typical fT = 30 MHz
Application
Audio power amplifier
3
2
Description 1
TO-264
This device is a NPN transistor manufactured
using new BiT-LA (bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
2SC5200 2SC5200 TO-264 Tube
September 2009 Doc ID 16310 Rev 1 1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com 8
change without notice.
Electrical ratings 2SC5200
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 230 V
VCEO Collector-emitter voltage (IB = 0) 230 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 15 A
ICM Collector peak current 30 A
PTOT Total dissipation at TC = 25