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TIP120/121/122
TIP125/126/127
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS

s STMicroelectronics PREFERRED
SALESTYPES

DESCRIPTION
The TIP120, TIP121 and TIP122 are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in power linear and switching applications. 3
The complementary PNP types are TIP125, 2
1
TIP126 and TIP127, respectively.
TO-220




INTERNAL SCHEMATIC DIAGRAM




R1 Typ. = 5 K R2 Typ. = 150


ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP120 TIP121 TIP122
PNP TIP125 TIP126 TIP127
V CBO Collector-Base Voltage (I E = 0) 60 80 100 V
V CEO Collector-Emitter Voltage (I B = 0) 60 80 100 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 5 A
I CM Collector Peak Current 8 A
IB Base Current 0.1 A
P tot Total Dissipation at T case 25 o C 65 W
o
T amb 25 C 2 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
* For PNP types voltage and current values are negative.

March 2000 1/4
TIP120/TIP121/TIP122/TIP125/TIP126/TIP127

THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.92 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W


ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CEO Collector Cut-off for TIP120/125 V CE = 30 V 0.5 mA
Current (I B = 0) for TIP121/126 V CE = 40 V 0.5 mA
for TIP122/127 V CE = 50 V 0.5 mA
I CBO Collector Cut-off for TIP120/125 V CB = 60 V 0.2 mA
Current (I B = 0) for TIP121/126 V CB = 80 V 0.2 mA
for TIP122/127 V CB = 100 V 0.2 mA
I EBO Emitter Cut-off Current V EB = 5 V 2 mA
(I C = 0)
VCEO(sus) * Collector-Emitter I C = 30 mA
Sustaining Voltage for TIP120/125 60 V
(I B = 0) for TIP121/126 80 V
for TIP122/127 100 V
V CE(sat) * Collector-Emitter IC = 3 A I B = 12 mA 2 V
Saturation Voltage IC = 5 A I B = 20 mA 4 V
V BE(on) * Base-Emitter Voltage IC = 3 A V CE = 3 V 2.5 V
h FE * DC Current Gain I C = 0.5 A V CE = 3 V 1000
IC = 3 A V CE = 3 V 1000
Pulsed: Pulse duration = 300