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CES2312
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

20V, 4.5A, RDS(ON) = 33m @VGS = 4.5V.
RDS(ON) = 40m @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).

Rugged and reliable. D
Lead free product is acquired.

SOT-23 package.

G
D
S

G

SOT-23 S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS