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SEMICONDUCTOR KTX111T
TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES E
K B K
Including two devices in TS6.
DIM MILLIMETERS
(Thin Super Mini type with 6 pin) 1 6 A _
2.9 + 0.2
B 1.6+0.2/-0.1
Simplify circuit design. C _
0.70 + 0.05
G
2 5 _
0.4 + 0.1
Reduce a quantity of parts and manufacturing process. D
F
A
E 2.8+0.2/-0.3
_
G
3 4 F 1.9 + 0.2
G 0.95
D
H _
0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
EQUIVALENT CIRCUIT (TOP VIEW) K 0.60
C
L
L 0.55
6 5 4 I H
J J
Marking
1. Q1 EMITTER
6 5 4 2. Q1 BASE
h FE Rank Lot No. 3. Q2 COLLECTOR
Q1 Q2
4. Q2 EMITTER
5. Q2 BASE
Type Name
B 6. Q1 COLLECTOR
1 2 3
1 2 3 TS6
Q1 MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 35 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 500
Emitter Current IE -500
Q2 MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -35 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -500
Emitter Current IE 500
Q1, Q2 MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation PC * 0.9 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Package mounted on a ceramic board (600 0.8 )
2002. 1. 24 Revision No : 1 1/4
KTX111T
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1
hFE(1) (Note) VCE=1V, IC=100 70 - 240
DC Current Gain
hFE(2) (Note) VCE=6V, IC=400 25 - -
Collector-Emitter Saturation Voltage VCE(SAT) IC=100 , IB=10 - 0.1 0.25 V
Base-Emitter Voltage VBE VCE=1V, IC=100 - 0.8 1.0 V
Transition Frequency fT VCE=6V, IC=20 - 300 -
Collector Output Capacitance Cob VCB=6V, IE=0, f=1 - 7.0 -
Note) hFE(1) Classification O:70~140, Y:120~240.
hFE(2) Classification O:25(Min), Y:40(Min).
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -0.1
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1
hFE(1) (Note) VCE=-1V, IC=-100 70 - 240
DC Current Gain
hFE(2) (Note) VCE=-6V, IC=-400 25 - -
Collector-Emitter Saturation Voltage VCE(SAT) IC=-100 , IB=-10 - -0.1 -0.25 V
Base-Emitter Voltage VBE VCE=-1V, IC=-100 - -0.8 -1.0 V
Transition Frequency fT VCE=-6V, IC=-20 - 200 -
Collector Output Capacitance Cob VCB=-6V, IE=0, f=1 - 13 -
Note) hFE(1) Classification O:70~140, Y:120~240.
hFE(2) Classification O:25(Min), Y:40(Min).
2002. 1. 24 Revision No : 1 2/4
KTX111T
Q 1 (NPN TRANSISOR)
I C - VCE h FE - I C
500 500
COMMON EMITTER
COLLECTOR CURRENT I C (mA)
Ta=25 C 300
DC CURRENT GAIN h FE
400 Ta=100 C VCE =6V
6.0 4.0 3.0
300 2.0
100
Ta=-25 C
Ta=25 C
200 50
1.0 VCE =1V
30
100 0.5 COMMON
0 I B =0.1mA EMITTER
0 10
0 1 2 3 4 5 0.5 1 3 10 30 100 300 1k
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
I B - VBE VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
2k 1
COMMON EMITTER COMMON
1k VCE =6V 0.5 EMITTER
BASE CURRENT I B (