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PZT965
NPN Transistor
Elektronische Bauelemente Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZT965 is designed for use as
AF output amplifier and flash unit.
Date Code
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 6.70 7.30 B 13 T YP.
C
BE
C
9 6 5 C 2.90 3.10 J 2.30 REF.
D 0.02 0.10 1 6.30 6.70
E 0C 10 C 2 6.30 6.70
I 0.60 0.80 3 3.30 3.70
H 0.25 0.35 4 3.30 3.70
5 1.40 1.80
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ABSOLUTE MAXIMUM RATINGS Ta=25 C
Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 7 V
Collector Current (Continous) 5
IC A
Collector Current (Peak PT=10mS) 8
PD Total Power Dissipation 2 W
TJ,Tstg Junction and Storage Temperature -55~+150 C
O
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ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter Symbol Min Typ. Max Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO 40 - - V I C= 100