Text preview for : ceu16n10_ced16n10.pdf part of CET ceu16n10 ced16n10 . Electronic Components Datasheets Active components Transistors CET ceu16n10_ced16n10.pdf
Back to : ceu16n10_ced16n10.pdf | Home
CED16N10/CEU16N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 13.3A, RDS(ON) = 120m @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-251 & TO-252 package.
G
D
G G
D
S S
CEU SERIES CED SERIES
TO-252(D-PAK) TO-251(I-PAK) S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS