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BUK7907-55ATE
TrenchPLUS standard level FET
M3D745
Rev. 02 -- 16 July 2002 Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOSTM technology, featuring very low on state resistance, and TrenchPLUS
diodes for Electrostatic Discharge (ESD) and temperature sensing.
Product availability:
BUK7907-55ATE in SOT263B.
2. Features
s Typical on-state resistance 5.8 m
s Q101 compliant
s ESD protection
s Monolithically integrated temperature sensor for overload protection.
3. Applications
s Automotive and power switching:
x 12 V and 24 V high power motor drives, e.g. Electrical Power Assisted
Steering (EPAS)
x Protected drive for lamps.
4. Pinning information
Table 1: Pinning - SOT263B simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb d a
2 anode (a)
3 drain (d) g
4 cathode (k)
5 source (s)
MBL317 s k
mb mounting base;
connected to drain (d) 1 5
MBL263
SOT263B
Philips Semiconductors BUK7907-55ATE
TrenchPLUS standard level FET
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25