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MMBT2222AT
Plastic-Encapsulate Transistors COLLECTOR
3
3
NPN Silicon 1
2
1

P b Lead(Pb)-Free BASE

2
SC-89
EMITTER (SOT-523F)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 75 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current-Continuous IC 600 mAdc

THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board (1) mW
TA=25 C PD 150
Thermal Resistance, Junction to Ambient RJA 833 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C

DEVICE MARKING
MMBT2222AT=1P

ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) (2) V(BR)CEO 40 - V

Collector-Base Breakdown Voltage (IC= 10