std17n05.pdf part of ST std17n05 std17n05.pdf, . Electronic Components Datasheets Active components Transistors ST std17n05.pdf text manual preview

Text preview for : std17n05.pdf part of ST std17n05 . Electronic Components Datasheets Active components Transistors ST std17n05.pdf

Back to : std17n05.pdf | Home

STD17N05
STD17N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR

TYPE V DSS R DS( on) ID
STD17N05 50 V < 0.085 17 A
STD17N06 60 V < 0.085 17 A

s TYPICAL RDS(on) = 0.06
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC 3
s
2 3
s LOW GATE CHARGE
1 1
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED IPAK DPAK
CHARACTERIZATION TO-251 TO-252
s THROUGH-HOLE IPAK (TO-251) POWER (Suffix "-1") (Suffix "T4")
PACKAGE IN TUBE (SUFFIX "-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s REGULATORS
s DC-DC & DC-AC CONVERTERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
STD17N05 STD17N06
VD S Drain-source Voltage (V GS = 0) 50 60 V
V DG R Drain- gate Voltage (R GS = 20 k) 50 60 V
V GS Gate-source Voltage