2sa1012.pdf part of UTC 2sa1012 2sa1012.pdf, . Electronic Components Datasheets Active components Transistors UTC 2sa1012.pdf text manual preview

Text preview for : 2sa1012.pdf part of UTC 2sa1012 . Electronic Components Datasheets Active components Transistors UTC 2sa1012.pdf

Back to : 2sa1012.pdf | Home

UTC A1012 SILICON PNP EPITAXIAL TRANSISTOR

SILICON PNPEPITAXIAL
TRANSISTOR

DESCRIPTION
The A1012 is designed for silicon current switching
application.

1
FEATURES
*Low collector saturation voltage
Vce(sat)=-0.4V(MAX.) at Ic=-3A
*High speed switching time
Tstg=1.0us(Typ.)
*Complementary to 2SC2562
TO-220

1:BASE 2: COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER SYMBOL RATING UNIT
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Total Power Dissipation(Ta=25