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SEMICONDUCTOR KRC410V~KRC414V
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
E

FEATURES B

With Built-in Bias Resistors.
Simplify Circuit Design.
2 DIM MILLIMETERS
Reduce a Quantity of Parts and Manufacturing Process. A _
1.2 +0.05

D
G
A
B _
0.8 +0.05
High Packing Density. 1

H
3 C _
0.5 + 0.05
_

K
D 0.3 + 0.05
E _
1.2 + 0.05
EQUIVALENT CIRCUIT G _
0.8 + 0.05
P P H 0.40
J _
0.12 + 0.05
C K _
0.2 + 0.05
P 5

C
R1

J
B

1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
E

VSM
MAXIMUM RATING (Ta=25