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TP0610KL/BS250KL
New Product Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY D TrenchFETr Power MOSFET
D ESD Protected: 2000 V
V(BR)DSS(min) (V) rDS(on) (W) VGS(th) (V) ID (A)
6 @ VGS = -10 V -0.27 APPLICATIONS
-60
60 -1 to -3.0
1 30
10 @ VGS = -4.5 V -0.21 D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Power Supply, Converter Circuits
D Motor Control
TO-226AA TO-92-18RM
(TO-92) (TO-18 Lead Form) D
S 1 D 1
Device Marking Device Marking
Front View Front View 100 W
G 2 G 2 G
"S" TP "S" BS
0610KL 250KL
xxyy xxyy
D 3 S 3
"S" = Siliconix Logo "S" = Siliconix Logo
xxyy = Date Code xxyy = Date Code
Top View Top View
Ordering Information: TP0610KL-TR1 Ordering Information: BS250KL-TR1 S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -60
V
Gate-Source Voltage VGS "20
TA = 25_C -0.27
Continuous Drain Current ID
TA = 70_C -0.22 A
Pulse Drain Currenta IDM -1.0
TA = 25_C 0.8
Power Dissipation PD W
TA = 70_C 0.51
Maximum Junction-to-Ambient RthJA 156 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 72712 www.vishay.com
S-40244--Rev. A, 16-Feb-04 1
TP0610KL/BS250KL
Vishay Siliconix New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -10