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STW9N150
N-channel 1500 V - 1.8 - 8 A - TO-247
very high voltage PowerMESHTM Power MOSFET
Features
Type VDSS RDS(on) ID Pw
STW9N150 1500 V < 2.5 8A 320 W
100% avalanche tested
Avalanche ruggedness
3
Gate charge minimized 2
1
Very low intrinsic capacitances TO-247
High speed switching
Very low on-resistance
Application
Switching applications Figure 1. Internal schematic diagram
Description
Using the well consolidated high voltage MESH
OVERLAYTM process, STMicroelectronics has
designed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the company's proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
Table 1. Device summary
Order code Marking Package Packaging
STW9N150 9N150 TO-247 Tube
January 2008 Rev 2 1/12
www.st.com 12
Contents STW9N150
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 5
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STW9N150 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 1500 V
VGS Gate- source voltage