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SEMICONDUCTOR KTB772
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
AUDIO FREQUENCY POWER AMPLIFIER
A
LOW SPEED SWITCHING B D
C
E
FEATURES
Complementary to KTD882. F
G
H
DIM MILLIMETERS
J
MAXIMUM RATING (Ta=25 ) A 8.3 MAX
K L B 5.8
CHARACTERISTIC SYMBOL RATING UNIT C 0.7
D _
3.2 + 0.1
Collector-Base Voltage VCBO -40 V E 3.5
_
F 11.0 + 0.3
G 2.9 MAX
Collector-Emitter Voltage VCEO -30 V M
H 1.0 MAX
J 1.9 MAX
Emitter-Base Voltage VEBO -5 V O K _
0.75 + 0.15
N P
1 2 3 L _
15.50 + 0.5
DC IC -3 M _
2.3 + 0.1
Collector Current A N _
0.65 + 0.15
Pulse (Note) ICP -7 1. EMITTER O 1.6
2. COLLECTOR P 3.4 MAX
Base Current (DC) IB -0.6 A 3. BASE
Collector Power Ta=25 1.5
PC W
Dissipation Tc=25 10 TO-126
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Note : Pulse Width 10mS, Duty Cycle 50%.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -1 A
Emitter-Cut-off Current IEBO VEB=-3V, IC=0 - - -1 A
hFE(1) VCE=-2V, IC=-20mA 30 220 -
DC Current Gain *
hFE(2) (Note) VCE=-2V, IC=-1A 100 160 400
Collector-Emitter Saturation Voltage * VCE(sat) IC=-2A, IB=-0.2A - -0.3 -0.5 V
Base-Emitter Saturation Voltage * VBE(sat) IC=-2V, IB=-0.2A - -1.0 -2.0 V
Current Gain Bandwidth Product fT VCE=-5V, IC=-0.1A - 80 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 55 - pF
* Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed
Note: hFE(2) Classification O:100 200 , Y:160 320 , GR:200 400
2003. 7. 24 Revision No : 4 1/3
KTB772
I C - VCE h FE - I C
-1.8 1K
COLLECTOR CURRENT I C (A)
500
DC CURRENT GAIN h FE
-1.6 IB =-10mA 300
IB =-9mA VCE =-2V
IB =-8mA 100
-1.2 IB =-7mA
IB =-6mA 50
IB =-5mA 30
-1.0
IB =-4mA
IB =-3mA
10
-0.4 5
IB =-2mA 3
IB =-1mA
0 1
0 -4 -8 -12 -16 -20 -1 -3 -10 -30 -100 -300 -1K -3K
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
SATURATION VOLTAGE VCE(sat), V BE(sat) (mV)
V CE(sat) ,V BE(sat) - I C C ob - VCB
-10K 1K
I C /I B =10 I E =0
-5K 500
f=1MHz
-3K 300
CAPACITANCE Cob (pF)
VBE (sat)
-1K
100
-500 50
-300
30
-100
-50 10
-30 5
VCE (sat) 3
-10
-5
-3 1
-1 -3 -10 -30 -100 -300 -1K -3K -1 -3 -10 -30 -100 -300 -1K
COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE V CB (V)
CURRENT GAIN BANDWIDTH PRODUCT f T (MHz)
f T - IC SAFE OPERATING AREA
1K -10
COLLECTOR CURRENT I C (A)
10
500 -5 I C MAX.
0