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SEMICONDUCTOR KRC860F~KRC864F
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B
B1
FEATURES
With Built-in Bias Resistors. 1 6
C
Simplify Circuit Design. DIM MILLIMETERS
A1
A
2 5 A _
1.0 + 0.05
Reduce a Quantity of Parts and Manufacturing Process.
C
A1 _
0.7 + 0.05
_
D
High Packing Density. B 1.0 + 0.05
3 _
4 B1 0.8 + 0.05
Thin Fine Pitch Super mini 6pin Package. C 0.35
D _
0.15 + 0.05
H 0.38+0.02/-0.04
T _
0.1 + 0.05
EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW)
H
T
6 5 4
C
1. Q1 EMITTER
R1
2. Q1 BASE
B Q1
3. Q2 COLLECTOR
Q2 4. Q2 EMITTER
5. Q2 BASE
6. Q1 COLLECTOR
E
1 2 3
TFS6
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 20 V Collector Power Dissipation PC * 50 mW
Collector-Emitter Voltage VCEO 20 V Junction Temperature Tj 150
Emitter-Base Voltage VEBO 5 V Storage TemperatureRange Tstg -55 150
Collector Current IC 50 mA * Total Rating.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=20V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE VCE=5V, IC=1mA 300 - - -
Collector-Emitter Saturation Voltage VCE(sat) IC=5mA, IB=0.25mA - - 0.15 V
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 1.2 - pF
KRC860F 3.29 4.7 6.11
KRC861F 7 10 13
Input Resistor R1 -
KRC863F 15.4 22 28.6
KRC864F 32.9 47 61.1
Marking Type Name
6 5 4
MARK SPEC
TYPE KRC860F KRC861F KRC863F KRC864F
MARK LK LL LN LP
1 2 3
2008. 11. 20 Revision No : 3 1/4
KRC860F~KRC864F
IO - VI(ON) IO - VI(OFF)
KRC860F KRC860F
100 10000
VO= 0.2V VO= 5V
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (