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STS3C2F100
N-channel 100V - 0.110 - 3A SO-8
Complementary pair STripFETTM Power MOSFET
General features
Type VDSS RDS(on) ID
STS3C2F100(N-channel) 100V <0.145 3.0A
STS3C2F100(P-channel) 100V <0.380 1.5A
Standard outline for easy automated surface
mount assembly
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Ultra low gate charge S0-8
Ultra low on-resistance
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Description
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This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature SizeTM"
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Internal schematic diagram
strip-based process. The resulting transistor
shows extremely high packing density for low on-
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resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
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remarkable manufacturing reproducibility.
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Applications
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Switching application
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Order codes
Part number Marking Package Packaging
STS3C2F100 S3C2F100 SO-8 Tape & reel
November 2006 Rev 3 1/14
www.st.com 14
Contents STS3C2F100
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STS3C2F100 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (vgs = 0) 100 V
VGS Gate- source voltage