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MPSA13 / 14
NPN Epitaxial Silicon Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-92
FEATURES
Darlington TRANSISTOR
Power dissipation 1
2
3
PCM: 0.625 W (Tamb=25) 1 2 3
Collector current
1. EMITTER
ICM: 0.5 A
2. BASE
Collector-base voltage 3 . COLLECTOR
V(BR)CBO: 30 V
Operating and storage junction temperature range
TJ, Tstg: -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100