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CEP13N10L/CEB13N10L
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

100V, 12.8A, RDS(ON) = 175m @VGS = 10V.

RDS(ON) = 185m @VGS = 5V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability. D

Lead free product is acquired.

TO-220 & TO-263 package.

D
G
G
G D
S S
CEB SERIES CEP SERIES
TO-263(DD-PAK) TO-220 S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS