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STP4NC60A - STP4NC60AFP
STB4NC60A-1
N-CHANNEL 600V - 1.8 - 4.2A TO-220/TO-220FP/I2PAK
PowerMeshTMII MOSFET
TYPE VDSS RDS(on) ID
STP4NC60A 600V < 2 4.2A
STP4NC60AFP 600V < 2 4.2A
STB4NC60A-1 600V < 2 4.2A
s TYPICAL RDS(on) = 1.8 3
2
s EXTREMELY HIGH dv/dt CAPABILITY 1
s 100% AVALANCHE TESTED TO-220 TO-220FP
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
3
12
DESCRIPTION
The PowerMESHTMII is the evolution of the first (Tabless TO-220)
generation of MESH OVERLAYTM. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead- INTERNAL SCHEMATIC DIAGRAM
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP(B)4NC60A(-1) STP4NC60AFP
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage