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STW43NM60ND
N-channel 600 V, 0.075 , 35 A TO-247
FDmeshTM Power MOSFET (with fast diode)
Features
VDSS @ RDS(on)
Type ID
TJMAX max
STW43NM60ND 650 V < 0.088 35 A
The worldwide best RDS(on)*area amongst the 3
2
fast recovery diode devices 1
100% avalanche tested
TO-247
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities.
Application Figure 1. Internal schematic diagram
Switching applications
Description
The FDmeshTM II series belongs to the second
generation of MDmeshTM technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Order code Marking Package Packaging
STW43NM60ND 43NM60ND TO-247 Tube
February 2010 Doc ID 14402 Rev 3 1/12
www.st.com 12
Contents STW43NM60ND
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 14402 Rev 3
STW43NM60ND Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 600 V
VGS Gate-source voltage