buj106a.pdf part of Philips buj106a buj106a.pdf, . Electronic Components Datasheets Active components Transistors Philips buj106a.pdf text manual preview

Text preview for : buj106a.pdf part of Philips buj106a . Electronic Components Datasheets Active components Transistors Philips buj106a.pdf

Back to : buj106a.pdf | Home

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ106A

GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V
IC Collector current (DC) - 10 A
ICM Collector current peak value - 20 A
Ptot Total power dissipation Tmb 25