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SEMICONDUCTOR KTD2060
TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
A C
FEATURES
DIM MILLIMETERS
F
Good Linearity of hFE. S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
Complementary to KTB1368. E
C _
2.70 + 0.3
B
D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
_
MAXIMUM RATING (Ta=25 ) L L J 13.6 + 0.5
K
R _
K 3.7 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT L 1.2+0.25/-0.1
M
M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
Collector-Base Voltage VCBO 80 V
P _
6.8 + 0.1
Q _
4.5 + 0.2
Collector-Emitter Voltage VCEO 80 V _
R 2.6 + 0.2
N N H S 0.5 Typ
Emitter-Base Voltage VEBO 5 V
Collector Current IC 4 A
1. BASE
Base Current IB 0.4 A
Q
1 2 3
2. COLLECTOR
Collector Power Dissipation (Tc=25 ) PC 25 W 3. EMITTER
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=0 - - 30 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 80 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IC=10mA, IB=0 5 - - V
hFE(1) (Note) VCE=5V, IC=0.5A 40 - 240
DC Current Gain
hFE(2) VCE=5V, IC=3A 15 50 -
Collector-Emitter Saturation Voltage VCE(sat) IC=3A, IB=0.3A - 0.45 1.5 V
Base-Emitter Voltage VBE VCE=5V, IC=3A - 1.0 1.5 V
Transition Frequency fT VCE=5V, IC=0.5A - 8.0 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 90 - pF
Note : hFE(1) Classification R:40 80, O:70 140, Y:120 240
2007. 5. 22 Revision No : 2 1/2
KTD2060
I C - VCE V CE(sat) - I C
COLLECTOR-EMITTER SATURATION
4.0 10
0 120 COMMON EMITTER
20 160
COLLECTOR CURRENT I C (A)
240 100 5 I C /I B=10
VOLTAGE VCE(sat) (V)
3.2 80 3
60
2.4 1
40
0.5
Tc=-25 C
1.6 I B =20mA 0.3
Tc=75 C
COMMON EMITTER
0.8 0.1 Tc=25 C
Tc=25 C
0
0.05
0 0.03
0 1 2 3 4 5 6 0.003 0.01 0.03 0.1 0.3 1 3 5
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A)
h FE - I C SAFE OPERATING AREA
500 20
300
COLLECTOR CURRENT I C (A)
DC CURRENT GAIN h FE
10 IC MAX(PULSED) *
1m S
10
10m
Tc=75 C I C MAX
0m
S
100 5 (CONTINUOUS)
S
1s *
Tc=25 C
50 3 DC * * *
30 Tc=-25 C O
Tc PER
=2 A
5 TI
1 C ON
10
COMMON EMITTER 0.5
5 * SINGLE NONREPETITIVE
VCEO MAX.
VCE =5V PULSE Tc=25 C
0.3
3 CURVES MUST BE DERATED
0.002 0.01 0.03 0.1 0.3 1 3 5 LINEARLY WITH INCREASE
IN TEMPERATURE
COLLECTOR CURRENT I C (A)
0.1
1 3 10 30 100 200
COLLECTOR-EMITTER VOLTAGE VCE (V)
PC - Ta
35
COLLECTOR POWER DISSIPATION
Tc=Ta
30 INFINITE HEAT SINK
25
PC (W)
20
15
10
5
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
2007. 5. 22 Revision No : 2 2/2