buj100.pdf part of Philips buj100 buj100.pdf, . Electronic Components Datasheets Active components Transistors Philips buj100.pdf text manual preview

Text preview for : buj100.pdf part of Philips buj100 . Electronic Components Datasheets Active components Transistors Philips buj100.pdf

Back to : buj100.pdf | Home

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ100

GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for use
in compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V
IC Collector current (DC) - 1.0 A
ICM Collector current peak value - 2.0 A
Ptot Total power dissipation Tlead 25